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Cited article:

On the Crystallization of Ge2Sb2Te5 Thin Films Using a Thin-Film Resistive-Heating Element for Creating Optoelectronic and Integrated-Optical Elements and Devices on Their Basis

V. B. Glukhenkaya, G. N. Pestov, A. I. Gulidova, M. A. Saurov, P. A. Smirnov, M. E. Fedyanina, A. O. Kozlov and A. I. Savitskiy
Semiconductors 58 (13) 1070 (2024)
https://doi.org/10.1134/S1063782624700076

Modeling of Multilayer Structures with Tunable Optical Characteristics

N. M. Tolkach, N. V. Vishnyakov, V. G. Litvinov, A. A. Sherchenkov, E. P. Trusov, V. B. Glukhenkaya and D. V. Pepelyaev
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques 17 (6) 1217 (2023)
https://doi.org/10.1134/S1027451023060204

Phase-change transіtіon of chalcogenіde system Ge8Sb2-xBіxTe11 thіn fіlm usіng sіngle femtosecond laser pulses

V. Karabyn, J. Mіstrіk, Y. Tveryanovіch, et al.
Chalcogenide Letters 19 (12) 909 (2022)
https://doi.org/10.15251/CL.2022.1912.909