Les métaux réfractaires déposés en phase vapeur pour interconnexions dans les circuits intégrés

Chemical vapor deposition of refractory metals for silicon semiconductor technology

Professeur, Institut National Polytechnique de Grenoble École Nationale Supérieure d'Electrochimie et d'Electrométallurgie Laboratoire de Science des Surfaces et Matériaux Carbonés, Saint-Martin d'Hères.

Abstract

Conductive materials, namely aluminium alloys and heavily-doped polycrystalline silicon, commonly utilized for metallization of integrated circuits, suffer from severe limitations when used in the production of micron size devices with improved performance. The requisite properties of conductors and deposition processes for metallization of very large scale integrated (VLSI) circuits are examined. Refractory metals produced by chemical vapor deposition (CVD) appear to be appropriate materials for interconnects in the future generation of VLSI circuits. The literature date on CVD of refractory metals are presented. Criteria for the selection of chemically vapor deposited refractory metal films suitable for metallization of advanced integrated circuits are established, the presente status of CVD of Mo and W films for microelectronic applications is presented and discussed.