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Fig. 5.

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Images AFM d’empreintes résiduelles après décharge du GaN (a) non-irradié et (b) irradié à une fluence de 1013 ions/cm2 (profondeur de pénétration de 1 μm).
AFM images of residual prints after unloading of the GaN (a) non-irradiated and (b) irradiated using a fluency of 1013 ions/cm2 (penetration depth of 1 μm).
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