Review

The effect investigates of temperature on the optical and electrical properties of sprayed SnS: experimental and theoretical study

¹ MEEM & DD Group, Hassan II University of Casablanca, FSTM BP 146 Mohammedia 20650, Morocco
² IMERN Laboratory, SME2D Team, FST Errachidia, University Moulay Ismail of Meknes, BP 509 Boutalamine 52000 Errachidia, Morocco
³ Advanced Systems Engineering Laboratory, National School of Applied Sciences, Ibn Tofaîl University, Kenitra, Morocco
⁴ Centre for Electron Microscopy, Faculty of Sciences, Mohammed V University, Rabat 10014, Morocco
⁵ Materials Science Unit, DES, CNESTEN, B.P. 1382 R.P. 10001 - Rabat Morocco
⁶ LCOMS Laboratory, University of Lorraine, 57000 Metz, France

^* e-mail: nouriysf01@gmail.com

Received: 13 July 2023
Accepted: 25 January 2024

Abstract

In this study, Tin monosulfide SnS semiconductor absorbers was deposited by chemical spray pyrolysis route on the glass substrate. We examined the impact of substrate temperature on the structural, morphological, linear optical and electrical characteristics of SnS absorber at many substrate temperatures such as 50 °C, 375 °C and 400 °C. The SnS films have been analysed by diverse techniques like X-ray diffraction, Raman spectroscopy, Scanning electron microscopy and UV-Vis spectrophotometer. The X-ray diffraction (XRD) spectra revealed that the SnS crystallize in the orthorhombic crystal system with the apparition of the preferential crystallographic direction oriented along (111) planes. The SEM micrographs indicate a great uniformity and granular morphological surface of SnS films. Linear optical constants such as energy gap (E_g), coefficient of extinction (k), index of refraction (n), optical conductivity (σ_opt), as well as the electrical properties confirm the suitable application of SnS thin films as absorber layer in the optoelectronic device applications. Additionally, we have applied the density functional theory DFT and GGA generalized gradient approximation to study the electronic characteristics; as a result of the electronic band structure the SnS absorber has a suitable energy gap.